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This is silicon impregnation silicon carbide compact using high-purity SiC raw materials and is used as semiconductor heat processing components. The high quality level is maintained due to the integrated manufacturing process from raw materials to the finished products and the long-cultivated evaluation technology of the powder and compact. |
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Specification(measure of central tendency)
| Product Name | Silicon Impregnation Silicon Carbide Compact |
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| Item | PARUCOCERAM SI |
| Composition | Mechanical Property | Young's Modulus [GPa] |
Flexural Strength (3 Pt.) [MPa] |
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|---|---|---|---|---|---|
| Composition[Vol%] | α-SiC | Si | RT | 370 | 250 |
| 82 | 18 | 800°C | 360 | 220 | |
| Bulk density [kg/m3] | 3.02×103 | 1200°C | 340 | 220 | |
| Heatproof temperature [°C] | 1350 | Poisson ratio | 0.18 (RT) | ||
| Thermal Property | Thermal Conductivity [W/mK] | Specific Heat Capacity [kJ/kgK] | Coefficient of Thermal Expansion [1/K] | ||
| RT | 220 | 0.7 | RT～７00°C | 3.4×10-6 | |
| 700°C | 60 | 1.23 | 700～1200°C | 4.3×10-6 | |
| Impurity content (Pressure-Decomposition Method ICP-AES) [ppm] | |||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Element | Fe | Ni | Na | K | Mg | Ca | Cr | Mn | Zn | Cu | Ti | V | Al |
| Content Percentage | 3 | <2 | <0.5 | <1 | <0.1 | 5 | 0.3 | <0.1 | <0.1 | <0.1 | <3 | <3 | 25 |
*CVD-SiC Coating is also available if you wish. For details such as specifications, etc., please contact us.
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Inquiry
| Inquiries to | Pacific Rundum Co., Ltd. 1 Iwaseakada-machi, Toyama 931-8555 Japan  |
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| Division in charge | Fine Ceramics Division |
| Tel/fax | Tel: +81-76-438-1217 Fax: +81-76-438-1214 |
